Variation

Characterization of Random Telegraph Noise in Scaled High-κ/Metal-Gate MOSFETs with SiO2/HfO2 Gate Dielectrics
In the paper, random telegraph noise (RTN) in high-κ/metal-gate MOSFETs is investigated. The RTN in high-κ MOSFETs is found different …
Meng Li, Runsheng Wang, Jibin Zou, Ru Huang